STL22NF10 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT™ LOW GATE CHARGE STripFET™ II MOSFET

STL22NF10
N-CHANNEL 100V - 0.055 Ω - 22A PowerFLAT™
LOW GATE CHARGE STripFET™ II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STL22NF10
100 V <0.060 Ω 22 A⁽¹⁾
s TYPICAL R_DS(on) = 0.055 Ω
s IMPROVED DIE-TO-FOOTPRINT RATIO
s VERY LOW PROFILE PACKAGE (1mm MAX)
s VERY LOW THERMAL RESISTANCE
s VERY LOW GATE CHARGE
DESCRIPTION
This application specific Power MOSFET is the second
generation of STMicroelectronis unique "STripFET™"
technology. The resulting transistor shows extremely low
on-resistance and minimal gate charge. The new
PowerFLAT™ package allows a significant reduction in
board space without compromising performance.
PowerFLAT™(5x5)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY ISOLATED DC-DC
CONVERTERS
s TELECOM AND AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D(2)
I_D(2)
I_DM(3)
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T_C = 25°C (Steady State)
Drain Current (continuous) at T_C = 100°C
Drain Current (pulsed)
P_tot(2)
P_tot(1)
Total Dissipation at T_C = 25°C (Steady State)
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽⁵⁾ Peak Diode Recovery voltage slope
E_AS ⁽⁶⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
February 2003
.
Value
100
100
± 20
5.3
3.8
22
4
70
0.03
16
82
-55 to 150
Unit
V
V
V
A
A
A
W
W
W/°C
V/ns
mJ
°C
1/8