STL21N65M5 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 650 V, 0.175 Ω, 17 A PowerFLAT™ (8x8) HV ultra low gate charge MDmesh™ V Power MOSFET

STL21N65M5
N-channel 650 V, 0.175 Ω, 17 A PowerFLAT™ (8x8) HV
ultra low gate charge MDmesh™ V Power MOSFET
Features
Type
STL21N65M5
V_DSS @
T_Jmax
710 V
R_DS(on)
max
< 0.190 Ω
I_D
17 A ⁽¹⁾
1. The value is rated according to R_thj-case
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
The device is a N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
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Figure 1. Internal schematic diagram
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Table 1. Device summary
Order code
STL21N65M5
Marking
21N65M5
Package
PowerFLAT™ (8x8) HV
Packaging
Tape and reel
May 2011
Doc ID 17438 Rev 4
1/14
www.st.com
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