STL20NM20N_06 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT™ ULTRA LOW GATE CHARGE MDmesh™ II MOSFET

STL20NM20N
N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT™
ULTRA LOW GATE CHARGE MDmesh™ II MOSFET
Table 1: General Features
TYPE
V_DSS
R_DS(on)
I_D
STL20NM20N
200 V
< 0.105 Ω 20 A
■ WORLDWIDE LOWEST GATE CHARGE
■ TYPICAL R_DS(on) = 0.088Ω
■ IMPROVED DIE-TO-FOOTPRINT RATIO
■ VERY LOW PROFILE PACKAGE (1mm MAX)
■ VERY LOW THERMAL RESISTANCE
■ LOW GATE RESISTANCE
■ LOW INPUT CAPACITANCE
■ HIGH dv/dt and AVALANCHE CAPABILITIES
DESCRIPTION
This 200V MOSFET with a new advanced layout
brings all unique advantages of MDmesh technol-
ogy to lower voltages. The device exhibits world-
wide lowest gate charge for any given on-
resistance.Its use is therefore ideal as primary
switch in isolated DC-DC converters for Telecom
and Computer applications.Used in combination
with secondary-side low-voltage STripFET^TM prod-
ucts, it contributes to reducing losses and boosting
efficiency.The new PowerFLAT™ package allows
a significant reduction in board space without com-
promising performance.
Figure 1: Package
PowerFlat (6x5)
(Chip Scale Package)
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh^TM family is very suitable for increas-
ing power density allowing system miniaturization
and higher efficiencies
Table 2: Order Codes
SALES TYPE
STL20NM20N
MARKING
L20NM20N
PACKAGE
PowerFLAT™(6x5)
PACKAGING
TAPE & REEL
January 2006
Rev. 6
1/10