STL20N6F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – High avalanche ruggedness

STL20N6F7
N-channel 60 V, 0.0046 Ω typ., 20 A STripFET™ F7 Power
MOSFET in a PowerFLAT™ 3.3x3.3 package
Datasheet - production data
1
2
3
4
PowerFLAT™ 3.3x3.3 HV
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Features
Order code
STL20N6F7
VDS
60 V
RDS(on) max
0.0054 Ω
ID
20 A
• Among the lowest R_DS(on) on the market
• Excellent figure of merit (FoM)
• Low C_rss/C_iss ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
S(1, 2, 3)
Order code
STL20N6F7
1234
Marking
20N6F
AM15810v1
Table 1: Device summary
Package
PowerFLAT™ 3.3x3.3
Packing
Tape and reel
June 2015
DocID027433 Rev 3
This is information on a product in full production.
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