English
Language : 

STL19N65M5 Datasheet, PDF (1/17 Pages) STMicroelectronics – Excellent switching performance
STL19N65M5
N-channel 650 V, 0.215 Ω typ., 12.5 A MDmesh™ V
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - production data
Features
6 
6 
6 
* 
' 
3RZHU)/$7Œ[Ć+9
Figure 1. Internal schematic diagram
' 
* 
6 
$0Y
Order code
STL19N65M5
VDS
710 V
RDS(on)max.
0.240 Ω
ID
(1)
12.5 A
1. The value is rated according to Rthj-case and limited by
package.
• Worldwide best RDS(on) * area
• Higher VDSS rating and high dv/dt capability
• Excellent switching performance
Applications
• Switching applications
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STL19N65M5
Table 1. Device summary
Marking
Package
19N65M5
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
July 2013
This is information on a product in full production.
DocID024984 Rev 1
1/17
www.st.com