STL19N60DM2 Datasheet, PDF (1/13 Pages) STMicroelectronics – Fast-recovery body diode

STL19N60DM2
N-channel 600 V, 0.280 Ω typ., 11 A MDmesh™ DM2 with fast diode
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - preliminary data
Features
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Figure 1. Internal schematic diagram
D(3)
Order code V_DS @ T_Jmax R_DS(on)max
STL19N60DM2 650 V
0.320 Ω
I_D
11 A
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance R_DS(on)
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
G(1)
S(2)
AM01476v6
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh DM2 fast recovery diode
series. It offers very low recovery charge and time
(Q_rr, t_rr) combined with low R_DS(on), rendering it
suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STL19N60DM2
Table 1. Device summary
Marking
Package
19N60DM2
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
August 2014
DocID026785 Rev 1
1/13
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