STL18NM60N Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 600 V, 0.260 Ω, 6 A PowerFLAT™ 8x8 HV MDmesh™ II Power MOSFET

STL18NM60N
N-channel 600 V, 0.260 Ω, 6 A PowerFLAT™ 8x8 HV
MDmesh™ II Power MOSFET
Features
Order code
STL18NM60N
V_DSS @
T_Jmax
650 V
R_DS(on)
max
< 0.310 Ω
I_D
12 A ⁽¹⁾
1. The value is rated according to R_thj-case
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
3
3
'
"OTTOMVIEW
$
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Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STL18NM60N
Marking
18NM60N
Package
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
November 2011
Doc ID 018856 Rev 2
1/14
www.st.com
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