STL18N65M5 Datasheet, PDF (1/17 Pages) STMicroelectronics – Very low intrinsic capacitance

STL18N65M5
N-channel 650 V, 0.215 Ω typ., 15 A MDmesh™ V Power MOSFET
in a PowerFLAT™ 5x6 HV package
Datasheet − preliminary data
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PowerFLAT™ 5x6 HV
Features
Order code
STL18N65M5
V_DS
710 V
R_DS(on)max.
0.240 Ω
I_D
15 A⁽¹⁾
1. The value is rated according to R_thj-case and limited
by package.
• Outstanding R_DS(on)*area
• Extremely large avalanche performance
• Gate charge minimized
• Very low intrinsic capacitance
• 100% avalanche tested
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
S(1, 2, 3)
12 34
Top View
AM15540v2
Applications
• Switching applications
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STL18N65M5
Table 1. Device summary
Marking
Package
18N65M5
PowerFLAT™ 5x6 HV
Packaging
Tape and reel
June 2013
DocID023634 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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