STL18N60M2 Datasheet, PDF (1/16 Pages) STMicroelectronics – Extremely low gate charge

STL18N60M2
N-channel 600 V, 0.278 Ω typ., 9 A MDmesh II Plus™ low Qg
Power MOSFET in a PowerFLAT™ 5x6 HV package
Datasheet - production data
Features
1
2
3
4
PowerFLAT™ 5x6 HV
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
G(4)
S(1, 2, 3)
AM01476v1
Order code
STL18N60M2
V_DS @
T_Jmax
650 V
R_DS(on) max
I_D
0.308 Ω
9A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Order code
STL18N60M2
Table 1. Device summary
Marking
Package
18N60M2
PowerFLAT™ 5x6 HV
Packaging
Tape and reel
June 2014
This is information on a product in full production.
DocID026517 Rev 1
1/16
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