STL17N65M5 Datasheet, PDF (1/16 Pages) STMicroelectronics – Excellent switching performance

STL17N65M5
N-channel 650 V, 0.338 Ω typ., 10 A MDmesh™ V Power MOSFET
in a PowerFLAT™ 8x8 HV package
Datasheet - preliminary data
Features
6
6
6
*
%RWWRPĆYLHZ
'
3RZHU)/$7ŒĆ[Ć+9
Figure 1. Internal schematic diagram
'
*
6
$0Y
Order code V_DS @ T_Jmax R_DS(on) max I_D
STL17N65M5 710 V
0.374 Ω
(1)
10 A
1. The value is rated according to R_thj-case and limited by
package
• Worldwide best R_DS(on) * area
• Higher V_DSS rating and high dv/dt capability
• Excellent switching performance
Applications
• Switching applications
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STL17N65M5
Table 1. Device summary
Marking
Package
17N65M5
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
July 2013
DocID023031 Rev 3
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/16
www.st.com