STL17N3LLH6 Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 30 V, 0.0038 Ω, 17 A PowerFLAT™(3.3x3.3) STripFET™ VI DeepGATE™ Power MOSFET

STL17N3LLH6
N-channel 30 V, 0.0038 Ω, 17 A PowerFLAT™(3.3x3.3)
STripFET™ VI DeepGATE™ Power MOSFET
Features
Order code
STL17N3LLH6
V_DSS
30 V
R_DS(on)
max.
0.0045 Ω
I_D
17 A ⁽¹⁾
1. The value is rated according R_thj-pcb
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
■ Very low switching gate charge
Application
Switching applications
Description
This product utilizes the 6^th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R_DS(on) in a standard
package, that makes it suitable for the most
demanding DC-DC converter applications, where
high power density has to be achieved.
PowerFLAT™ (3.3 x 3.3)
Figure 1.
Pin-out configuration
123 4
SSS G
DDD D
876 5
BOTTOM VIEW
Table 1. Device summary
Order code
STL17N3LLH6
Marking
17N3L
Package
PowerFLAT™ (3.3 x 3.3)
Packaging
Tape and reel
November 2010
Doc ID 15535 Rev 3
1/13
www.st.com
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