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STL16N1VH5 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 12 V, 0.0022, 16 A, PowerFLAT (3.3 x 3.3) STripFET V Power MOSFET
STL16N1VH5
N-channel 12 V, 0.0022 Ω , 16 A, PowerFLAT™ (3.3 x 3.3)
STripFET™ V Power MOSFET
Features
Order code
VDSS
RDS(on)
max
ID
STL16N1VH5
12 V
0.003 Ω 16 A (1)
t(s) 1. The value is rated according Rthj-pcb
c ■ Improved die-to-footprint ratio
u ■ Very low profile package (1mm max)
rod ■ Very low thermal resistance
P ■ Very low gate charge
te ■ Very low on-resistance
le ■ Optimized to be driven @ 2.5 V
so ■ In compliance with the 2002/95/EC European
b directive
- O Applications
t(s) ■ Switching applications
duc Description
ro This device is an N-channel Power MOSFET
P developed using STMicroelectronics’
te STripFET™V technology. The device has been
le optimized to achieve very low on-state resistance,
contributing to an FOM that is among the best in
Obso its class.
PowerFLAT™(3.3x3.3)
Figure 1.
Internal schematic diagram
123 4
SSS G
DDD D
876 5
BOTTOM VIEW
Table 1. Device summary
Order code
STL16N1VH5
Marking
16N1V
Package
PowerFLAT™ (3.3 x 3.3)
Packaging
Tape and reel
June 2011
Doc ID 16802 Rev 2
1/14
www.st.com
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