STL160N3LLH6 Datasheet, PDF (1/16 Pages) STMicroelectronics – N-channel 30 V, 0.0011 Ω, 35 A PowerFLAT™ 5x6 STripFET™ VI DeepGATE™ Power MOSFET

STL160N3LLH6
N-channel 30 V, 0.0011 Ω, 35 A PowerFLAT™ 5x6
STripFET™ VI DeepGATE™ Power MOSFET
Features
Order code
STL160N3LLH6
V_DSS
30 V
R_DS(on)
max
0.0013 Ω
I_D
35 A ⁽¹⁾
1. The value is rated according R_thj-pcb
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
1
2
3
4
PowerFLAT™ 5x6
Figure 1. Internal schematic diagram

 
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Table 1. Device summary
Order code
Marking
STL160N3LLH6
160N3LLH6
Package
PowerFLAT™ 5x6
Packaging
Tape and reel
November 2011
Doc ID 18223 Rev 2
1/16
www.st.com
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