STL15N60M2-EP Datasheet, PDF (1/16 Pages) STMicroelectronics – Tailored for very high frequency converters

STL15N60M2-EP
N-channel 600 V, 0.389 Ω typ., 7 A MDmesh™ M2 EP
Power MOSFET in a PowerFLAT™ 5x6 HV package
Datasheet - production data
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2
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PowerFLAT™ 5x6 HV
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
S(1, 2, 3)
12 34
Top View
AM15540v1
Features
Order code
STL15N60M2-EP
VDS @
TJmax
RDS(on)
max.
ID
PTOT
650 V 0.418 Ω 7 A 55 W
• Extremely low gate charge
• Excellent output capacitance (C_OSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• Tailored for very high frequency converters
(f > 150 kHz)
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to its strip
layout and an improved vertical structure, the
device exhibits low on-resistance and optimized
switching characteristics with very low turn-off
switching losses, rendering it suitable for the
most demanding very high frequency converters.
Order code
STL15N60M2-EP
Table 1: Device summary
Marking
Package
15N60M2EP
PowerFLAT™ 5x6 HV
Packing
Tape and reel
June 2015
DocID027974 Rev 1
This is information on a product in full production.
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