STL150N3LLH6 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 30 V, 0.0016 Ω, 33 A PowerFLAT™ (6x5) STripFET™ VI DeepGATE™ Power MOSFET

STL150N3LLH6
N-channel 30 V, 0.0016 Ω, 33 A PowerFLAT™ (6x5)
STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
STL150N3LLH6
V_DSS
30 V
R_DS(on)
max
0.0024 Ω
I_D
33 A ⁽¹⁾
1. The value is rated according R_thj-pcb
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
■ Very low switching gate charge
Application
■ Switching applications
Description
This product utilizes the 6^th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest R_DS(on) in all
packages.
PowerFLAT™ ( 6x5 )
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STL150N3LLH6
150N3LLH6
Package
PowerFLAT™ (6x5)
Packaging
Tape and reel
September 2009
Doc ID 15345 Rev 2
1/12
www.st.com
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