STL140N6F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – High avalanche ruggedness

STL140N6F7
N-channel 60 V, 2.4 mΩ typ., 140 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code VDS RDS(on) max.
ID
PTOT
STL140N6F7 60 V 2.8 mΩ 140 A 125 W
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STL140N6F7
Table 1: Device summary
Marking
Package
140N6F7
PowerFLAT™ 5x6
Packing
Tape and reel
April 2017
DocID025086 Rev 5
This is information on a product in full production.
1/13
www.st.com