STL13NM60N Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 600 V, 0.320 Ω, 10 A PowerFLAT™ (8x8) HV MDmesh™ II Power MOSFET

STL13NM60N
N-channel 600 V, 0.320 Ω, 10 A PowerFLAT™ (8x8) HV
MDmesh™ II Power MOSFET
Features
Order code
STL13NM60N
V_DSS @
T_Jmax
650 V
R_DS(on)
max
< 0.385 Ω
I_D
10 A ⁽¹⁾
1. The value is rated according to R_thj-case
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
This device is a N-channel Power MOSFETs
made using the second generation of MDmesh™
technology. This revolutionary transistor
associates a new vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
3
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Figure 1. Internal schematic diagram
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Table 1. Device summary
Order code
STL13NM60N
Marking
13NM60N
Package
PowerFLAT™ (8x8) HV
Packaging
Tape and reel
May 2011
Doc ID 018870 Rev 1
1/14
www.st.com
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