STL13N65M2 Datasheet, PDF (1/16 Pages) STMicroelectronics – Extremely low gate charge

STL13N65M2
N-channel 650 V, 0.365 Ω typ., 6.5 A MDmesh™ M2
Power MOSFET in a PowerFLAT™ 5x6 HV package
Datasheet − production data
Features
1
2
3
4
PowerFLAT™ 5x6 HV
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Order code
STL13N65M2
V_DS
650 V
R_DS(on) max I_D
0.475 Ω 6.5 A
• Extremely low gate charge
• Excellent output capacitance (C_OSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics, rendering
it suitable for the most demanding high efficiency
converters.
S(1, 2, 3)
12 34
Top View
AM15540v2
Order code
STL13N65M2
Table 1. Device summary
Marking
Package
13N65M2
PowerFLAT™ 5x6 HV
Packaging
Tape and reel
December 2014
This is information on a product in full production.
DocID027319 Rev 1
1/16
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