STL13N60DM2 Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 600 V, 0.350 (ohm) typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6 HV package

STL13N60DM2
N-channel 600 V, 0.350 Ω typ., 8 A MDmesh™ DM2
Power MOSFET in a PowerFLAT™ 5x6 HV package
Datasheet - production data
Features
Order code
STL13N60DM2
VDS
600 V
RDS(on) max.
ID
0.370 Ω
8A
1
2
3
4
PowerFLAT™ 5x6 HV
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
S(1, 2, 3)
12 34
Top View
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STL13N60DM2
Table 1: Device summary
Marking
Package
13N60DM2
PowerFLAT™ 5x6 HV
Packing
Tape and reel
December 2016
DocID029284 Rev 2
This is information on a product in full production.
1/15
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