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| STL13DP10F6 Datasheet, PDF (1/14 Pages) STMicroelectronics – Low gate drive power losses | |||
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STL13DP10F6
Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET⢠VI
DeepGATE⢠Power MOSFET in a PowerFLAT⢠5x6 double island
Datasheet - production data
Features
1
4
1
4
8
5
PowerFLAT⢠5x6
double island
Figure 1. Internal schematic diagram
Order code
STL13DP10F6
VDS
100 V
RDS(on) max. ID
0.18 â¦
3.3 A
⢠RDS(on) * Qg industry benchmark
⢠Extremely low on-resistance RDS(on)
⢠High avalanche ruggedness
⢠Low gate drive power losses
Applications
⢠Switching applications
Description
This device is a dual P-channel Power MOSFET
th
developed using the 6 generation of STripFETâ¢
DeepGATE⢠technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
Order code
STL13DP10F6
Table 1. Device summary
Marking
Packages
13DP10F6
PowerFLAT⢠5x6 double island
Packaging
Tape and reel
May 2014
This is information on a product in full production.
DocID023936 Rev 2
1/14
www.st.com
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