STL12N65M5 Datasheet, PDF (1/17 Pages) STMicroelectronics – Very low intrinsic capacitance

STL12N65M5
N-channel 650 V, 0.475 Ω typ., 8.5 A MDmesh™ V Power MOSFET
in a PowerFLAT™ 5x6 HV package
Datasheet − production data
Features
1
2
3
4
PowerFLAT^TM 5x6 HV
Figure 1. Internal schematic diagram
'
*
6
$0Y
Order code
STL12N65M5
V_DSS
710 V
R_DS(on) max
0.530 Ω
I_D
8.5 A
• Outstanding R_DS(on)*area
• Extremely large avalanche performance
• Gate charge minimized
• Very low intrinsic capacitance
• 100% avalanche tested
Applications
• Switching applications
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STL12N65M5
Table 1. Device summary
Marking
Package
12N65M5
PowerFLAT™ HV
Packaging
Tape and reel
July 2013
This is information on a product in full production.
DocID17450 Rev 4
1/17
www.st.com
17