STL120N4LF6AG Datasheet, PDF (1/14 Pages) STMicroelectronics – High avalanche ruggedness

STL120N4LF6AG
Automotive-grade N-channel 40 V, 3.0 mΩ typ., 120 A
STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
STL120N4LF6AG 40 V
RDS(on)
max.
3.6 mΩ
ID
PTOT
120 A 96 W
 Designed for automotive applications and
AEC-Q101 qualified
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
 Wettable flanks package
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STL120N4LF6AG
Table 1: Device summary
Marking
Package
120N4LF6
PowerFLAT™ 5x6
Packing
Tape and reel
September 2015
DocID028273 Rev 1
This is information on a product in full production.
1/14
www.st.com