STL120N4F6AG Datasheet, PDF (1/15 Pages) STMicroelectronics – Wettable flank package

STL120N4F6AG
Automotive-grade N-channel 40 V, 2.9 mΩ typ., 55 A
STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STL120N4F6AG
VDS
40 V
RDS(on) max.
3.6 mΩ
ID
55 A
 AEC-Q101 qualified
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
 Wettable flank package
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STL120N4F6AG
Table 1: Device summary
Marking
Package
120N4F6
PowerFLAT™ 5x6
Packaging
Tape and reel
March 2017
DocID027498 Rev 4
This is information on a product in full production.
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