STL11N6F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – High avalanche ruggedness

STL11N6F7
N-channel 60 V, 10 mΩ typ., 11 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 3.3x3.3 package
Datasheet - production data
1
2
3
4
PowerFLAT™ 3.3x3.3
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Features
Order code
STL11N6F7
V_DS
60 V
R_DS(on) max.
12 mΩ
I_D
11 A
Features
 Among the lowest R_DS(on) on the market
 Excellent figure of merit (FoM)
 Low C_rss/C_iss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
S(1, 2, 3)
1234
AM15810v1
Order code
STL11N6F7
Marking
11N6F
Table 1: Device summary
Package
PowerFLAT™ 3.3x3.3
Packing
Tape and reel
November 2015
DocID028134 Rev 2
This is information on a product in full production.
1/13
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