STL11N3LLH6 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 30 V, 0.006 typ., 11 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 3.3 x 3.3 package

STL11N3LLH6
N-channel 30 V, 0.006 Ω typ., 11 A STripFET™ VI DeepGATE™
Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package
Datasheet - production data
Features
1
2
3
4
PowerFLAT™ 3.3 x 3.3
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
S(1, 2, 3)
1234
Order code
STL11N3LLH6
V_DS
30 V
R_DS(on) max.
0.0075 Ω
I_D
11 A ⁽¹⁾
1. The value is rated according R_thj-pcb.
• R_DS(on) * Q_g industry benchmark
• Extremely low on-resistance R_DS(on)
• High avalanche ruggedness
• Low gate drive power losses
• Very low switching gate charge
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
AM15810v1
Order code
STL11N3LLH6
Table 1. Device summary
Marking
Package
11N3L
PowerFLAT™ 3.3 x 3.3
Packaging
Tape and reel
May 2013
This is information on a product in full production.
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