STL110N10F7 Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness

STL110N10F7
N-channel 100 V, 0.005 Ω typ., 107 A, STripFET™ H7
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Features
1
2
3
4
PowerFLAT™5x6
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Order code
STL110N10F7
V_DS
100 V
R_DS(on) max I_D P_TOT
0.006 Ω
107 A 136 W
(V_GS= 10 V)
• Among the lowest R_DS(on) on the market
• Excellent figure of merit (FoM)
• Low C_rss/C_iss ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes the
STripFET™ H7 technology with a trench gate
structure combined with extremely low on-
resistance. The device also offers ultra-low
capacitances for higher switching frequency
operations.
S(1, 2, 3)
12 34
Top View
AM15540v2
Order code
STL110N10F7
Table 1. Device summary
Marking
Package
110N10F7
PowerFLAT™ 5x6
Packaging
Tape and reel
August 2014
This is information on a product in full production.
DocID024004 Rev 4
1/15
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