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STL10DN15F3 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 150 V, 0.20 Ohm typ., 2.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package
STL10DN15F3
N-channel 150 V, 0.20 Ω typ., 2.8 A STripFET™ III Power MOSFET
in a PowerFLAT™ 5x6 double island package
Datasheet — production data
Features
Order code
STL10DN15F3
VDS@
TJmax
150 V
RDS(on)
max
<0.22 Ω
ID
2.8 A
■ Improved die-to-footprint ratio
■ Very low profile package (1 mm max)
■ Very low thermal resistance
■ Low on-resistance
Applications
■ Switching applications
Description
This device is an N-channel enhancement mode
Power MOSFET produced using
STMicroelectronics’ STripFET™ III technology,
which is specifically designed to minimize on-
resistance and gate charge to provide superior
switching performance.
PowerFLATTM 5x6
double island
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STL10DN15F3
10DN15F3
Package
PowerFLAT™ 5x6 double island
Packaging
Tape and reel
October 2012
This is information on a product in full production.
Doc ID 023781 Rev 1
1/14
www.st.com
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