STL100N10F7 Datasheet, PDF (1/16 Pages) STMicroelectronics – Switching applications

STL100N10F7
N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET™ VII DeepGATE™
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Features
1
2
3
4
PowerFLAT™ 5x6
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Order code
STL100N10F7
V_DSS
R_DS(on)
max
I_D
P_TOT
100 V 0.0073 Ω 19 A 5 W
• Ultra low on-resistance
• 100% avalanche tested
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 7^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
S(1, 2, 3)
12 34
Top View
AM15540v2
Order code
STL100N10F7
Table 1. Device summary
Marking
Package
100N10F7
PowerFLAT™ 5x6
Packaging
Tape and reel
July 2013
This is information on a product in full production.
DocID023656 Rev 4
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