STK30N2LLH5 Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 25 V, 0.0024 Ω, 30 A, PolarPAK® STripFET™V Power MOSFET

Features
STK30N2LLH5
N-channel 25 V, 0.0024 Ω, 30 A, PolarPAK^®
STripFET™V Power MOSFET
Preliminary Data
Type
STK30N2LLH5
V_DSS
25 V
R_DS(on)
max
< 0.0029 Ω
R_DS(on)*Q_g
54 nC*mΩ
■ Ultra low top and bottom junction to case
thermal resistance
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ Very low switching gate charge
■ Fully encapsulated die
■ 100% matte tin finish (in compliance with the
2002/95/EC european directive)
■ High avalanche ruggedness
■ PolarPAK^® is a trademark of VISHAY
Application
■ Switching applications
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available R_DS(on)*Q_g, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
PolarPAK^®
Figure 1. Internal schematic diagram
Bottom View
Top View
Table 1. Device summary
Order code
STK30N2LLH5
Marking
302L5
Package
PolarPAK^®
Packaging
Tape and reel
July 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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