STK12N05L Datasheet, PDF (1/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

STK12N05L
STK12N06L
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE
STK12N05L
STK12N06L
VDSS
50 V
60 V
R DS( on)
< 0.15 Ω
< 0.15 Ω
ID
12 A
12 A
s TYPICAL R_DS(on) = 0.115 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW GATE CHARGE
s LOGIC LEVEL COMPATIBLE INPUT
s 175^oC OPERATING TEMPERATURE FOR
STANDARD PACKAGE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
12
SOT-82
3
2
1
SOT-194
(option)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S
V_{DG R}
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
VGS
ID
I_D
ID M(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at T c = 25 ^oC
Drain Current (continuous) at T _c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1996
Val ue
STK12N05L
S T K 12 N0 6L
50
60
50
60
± 15
12
8
48
50
0 .3 3
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/^oC
o_C
o_C
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