STI50DE100 Datasheet, PDF (1/11 Pages) STMicroelectronics – Hybrid Emitter Switched Bipolar Transistor ESBT 1000 V - 50 A - 0.026 ohm

STI50DE100
Hybrid Emitter Switched Bipolar Transistor
ESBT^® 1000 V - 50 A - 0.026 Ω
Preliminary Data
General features
V_CS(ON)
1.3 V
I_C
50 A
R_CS(ON)
0.026 W
■ High voltage / high current Cascode
configuration
■ Ultra low equivalent on resistance
■ Very fast-switch up to 150 kHz
■ Ultra low C_iss
■ Low dynamic V_CS(ON)
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3
2
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I4PAC-4L
Applications
■ Industrial converters
■ Welding
Internal schematic diagrams
Description
The STI50DE100 is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STI50DE100 is designed for use in industrial
converters and/or welding equipment.
Order codes
Part Number
Marking
STI50DE100
STI50DE100
Package
I4PAC-4L
Packing
Tube
January 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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