STI40N65M2 Datasheet, PDF (1/14 Pages) STMicroelectronics – Extremely low gate charge

STI40N65M2, STP40N65M2
N-channel 650 V, 0.087 Ω typ., 32 A MDmesh™ M2
Power MOSFET in I²PAK and TO-220 packages
Datasheet - production data
TAB
TAB
I²PAK
1 ²³
TO-220
3
2
1
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STI40N65M2
STP40N65M2
VDS
650 V
RDS(on) max.
0.099 Ω
ID
32 A
• Extremely low gate charge
• Excellent output capacitance (C_OSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
Order code
STI40N65M2
STP40N65M2
S(3)
AM15572v1_tab
Table 1: Device summary
Marking
Package
40N65M2
I²PAK
TO-220
Packaging
Tube
February 2015
DocID027478 Rev 1
This is information on a product in full production.
1/14
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