STI260N6F6 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 60 V, 0.0024 Ω, 120 A STripFET™ VI DeepGATE™ Power MOSFET in TO-220 and I²PAK packages

STI260N6F6
STP260N6F6
N-channel 60 V, 0.0024 Ω, 120 A STripFET™ VI DeepGATE™
Power MOSFET in TO-220 and I²PAK packages
Features
Order codes
STI260N6F6
STP260N6F6
V_DSS
60 V
R_DS(on) max
I_D
< 0.003 Ω 120 A
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness
Application
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest R_DS(on) in all packages.
TAB
TAB
12³
I²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
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3
!-V
Table 1. Device summary
Order codes
STI260N6F6
STP260N6F6
Marking
260N6F6
Package
I²PAK
TO-220
Packaging
Tube
January 2012
Doc ID 17467 Rev 5
1/14
www.st.com
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