STI18NM60N Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 600 V, 0.27 Ω, 13 A MDmesh™ II Power MOSFET in TO-220, TO-220FP, TO-247, D²PAK and I²PAK

STB18NM60N, STF18NM60N, STI18NM60N
STP18NM60N, STW18NM60N
N-channel 600 V, 0.27 Ω, 13 A MDmesh™ II Power MOSFET
in TO-220, TO-220FP, TO-247, D²PAK and I²PAK
Features
Order codes
V_DSS
(@Tjmax)
R_DS(on)
max.
I_D
P_W
STB18NM60N
STF18NM60N
STI18NM60N
STP18NM60N
STW18NM60N
650 V
110 W
30 W
< 0.285 Ω 13 A
110 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-247
3
2
1
TO-220
123
I²PAK
3
1
D²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
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3
Table 1. Device summary
Order codes
STB18NM60N
STF18NM60N
STI18NM60N
STP18NM60N
STW18NM60N
Marking
18NM60N
18NM60N
18NM60N
18NM60N
18NM60N
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
!-V
Packaging
Tape and reel
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October 2010
Doc ID 15868 Rev 3
1/18
www.st.com
18