STI18N65M2 Datasheet, PDF (1/15 Pages) STMicroelectronics – Extremely low gate charge

STI18N65M2, STP18N65M2
N-channel 650 V, 0.275 Ω typ., 12 A MDmesh™ M2
Power MOSFET in I²PAK and TO-220 packages
Datasheet - production data
Features
TAB
TAB
123
I²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
, TAB
AM15572v1
Order code
STI18N65M2
STP18N65M2
V_DS
650V
R_DS(on) max I_D
0.33Ω 12 A
• Extremely low gate charge
• Excellent output capacitance (C_oss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
Order code
STI18N65M2
STP18N65M2
Table 1. Device summary
Marking
Package
18N65M2
I²PAK
TO-220
Packaging
Tube
January 2015
This is information on a product in full production.
DocID026870 Rev 2
1/15
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