STI150N10F7 Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness

STI150N10F7,
STP150N10F7
N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7
Power MOSFETs in I²PAK and TO-220 packages
Datasheet − production data
TAB
TAB
123
I²PAK
3
2
1
TO-220
Features
Order codes
STI150N10F7
STP150N10F7
V_DS R_DS(on)max I_D P_TOT
100 V 0.0042 Ω 110 A 250 W
• Among the lowest R_DS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Figure 1. Internal schematic diagram
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Description
These N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
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Order codes
STI150N10F7
STP150N10F7
Table 1. Device summary
Marking
Package
150N10F7
I²PAK
TO-220
August 2014
This is information on a product in full production.
DocID024552 Rev 4
Packaging
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