STH6N95K5-2 Datasheet, PDF (1/17 Pages) STMicroelectronics – Switching applications

STH6N95K5-2
N-channel 950 V, 1 Ω typ., 6 A MDmesh™ K5
Power MOSFET in a H²PAK-2 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(TAB)
G(1)
Features
Order code
VDS RDS(on) max. ID
PTOT
STH6N95K5-2 950 V 1.25 Ω 6 A 110 W
 Industry’s lowest RDS(on) x area
 Industry’s best figure of merit (FoM)
 Ultra low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
S(2, 3)
Order code
STH6N95K5-2
AM15557a.v3
Table 1: Device summary
Marking
Package
6N95K5
H²PAK-2
Packaging
Tape and reel
March 2015
DocID027383 Rev 3
This is information on a product in full production.
1/17
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