|
STH6N100 Datasheet, PDF (1/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |||
|
STH6N100
STH6N100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STH6N100
ST H 6N 10 0F I
VDSS
1000 V
1000 V
R DS( on)
<2â¦
<2â¦
ID
6A
3.7 A
s TYPICAL RDS(on) = 1.75 â¦
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INPUT CAPACITANCE
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
s DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
3
2
1
TO-218
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 kâ¦)
VGS Gate-source Voltage
ID
Drain Current (continuous) at T c = 25 oC
ID
Drain Current (continuous) at T c = 100 oC
IDM(â¢) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area
December 1996
Val ue
STH6N100
STH6N100
1000
1000
± 20
6
3.7
3.7
2.3
24
24
180
70
1. 44
0. 56

4000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
|
▷ |