STH410N4F7-2AG Datasheet, PDF (1/19 Pages) STMicroelectronics – Switching applications

STH410N4F7-2AG,
STH410N4F7-6AG
Automotive-grade N-channel 40 V, 0.8 mΩ typ., 200 A STripFET™ F7
Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
STH410N4F7-2AG
40 V
STH410N4F7-6AG
RDS(on)
max.
1.1 mΩ
ID
200 A
PTOT
365 W
 Designed for automotive applications and
AEC-Q101 qualified
 Among the lowest R_DS(on) on the market
 Excellent figure of merit (FoM)
 Low C_rss/C_iss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STH410N4F7-2AG
STH410N4F7-6AG
Table 1: Device summary
Marking
Package
410N4F7
H²PAK-2
H²PAK-6
Packing
Tape And Reel
February 2016
DocID027734 Rev 4
This is information on a product in full production.
1/19
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