STH400N4F6-2 Datasheet, PDF (1/18 Pages) STMicroelectronics – High avalanche ruggedness

STH400N4F6-2,
STH400N4F6-6
Automotive-grade N-channel 40 V, 0.85 mΩ typ.,180 A
STripFET™ VI DeepGATE™ Power MOSFETs
Datasheet - production data
Features
TAB
2
3
1
H²PAK-2
TAB
7
1
H²PAK-6
Order codes
V_DS
R_DS(on) max I_D
STH400N4F6-2
STH400N4F6-6
40 V
1.15 mΩ 180 A
• Designed for automotive applications and
AEC-Q101 qualified
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness
Figure 1. Internal schematic diagram
D(TAB)
D(TAB)
Applications
• Switching applications
Description
G(1)
S(2, 3)
H2PAK-2
G(1)
S(2, 3, 4, 5, 6, 7)
H2PAK-6
AM14551V1
These devices are N-channel Power MOSFETs
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest R_DS(on) in all packages.
Order codes
STH400N4F6-2
STH400N4F6-6
Table 1. Device summary
Marking
Package
400N4F6
2
H PAK-2
2
H PAK-6
Packaging
Tape and reel
February 2014
This is information on a product in full production.
DocID023429 Rev 2
1/18
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