STH360N4F6-2 Datasheet, PDF (1/12 Pages) STMicroelectronics – High avalanche ruggedness

STH360N4F6-2
Features
N-channel 40 V, 180 A STripFET™ VI DeepGATE™
Power MOSFET in H²PAK-2 package
Datasheet − preliminary data
Order code
STH360N4F6-2
V_DSS
40 V
R_DS(on) max
I_D
< 1.25 mΩ 180 A⁽¹⁾
1. Current limited by package
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
TAB
2
3
1
H²PAK-2
Figure 1. Internal schematic diagram
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Table 1. Device summary
Order code
STH360N4F6-2
Marking
360N4F6
3
!-V
Package
H²PAK-2
Packaging
Tape and reel
August 2012
Doc ID 023422 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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