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| STH320N4F6-2 Datasheet, PDF (1/19 Pages) STMicroelectronics – Automotive switching applications | |||
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Features
STH320N4F6-2,
STH320N4F6-6
N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6
STripFET⢠VI DeepGATE⢠Power MOSFET
Datasheet â production data
Order codes
STH320N4F6-2
STH320N4F6-6
VDS RDS(on) max
40 V
1.3 mΩ
1. Current limited by package.
â Standard threshold drive
â 100% avalanche tested
ID(1)
200 A
Applications
â Automotive switching applications
TAB
TAB
2
3
1
H2PAK-2
7
1
H2PAK-6
Description
These devices are N-channel Power MOSFETs
developed using the 6th generation of STripFETâ¢
DeepGATE⢠technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest RDS(on) in all packages.
Figure 1. Internal schematic diagram
D(TAB)
D(TAB)
G(1)
G(1)
Table 1. Device summary
Order codes
STH320N4F6-2
STH320N4F6-6
Marking
320N4F6
S(2, 3)
H2PAK-2
Package
H2PAK-2
H2PAK-6
S(2, 3, 4, 5, 6, 7)
H2PAK-6
SC06140_H2PAK-2-6
Packaging
Tape and reel
February 2013
This is information on a product in full production.
Doc ID 024221 Rev 1
1/19
www.st.com
19
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