STH315N10F7-2 Datasheet, PDF (1/19 Pages) STMicroelectronics – High avalanche ruggedness

STH315N10F7-2,
STH315N10F7-6
Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A
STripFET™ F7 Power MOSFETs
Datasheet - production data
Features
TAB
2
3
1
2
H PAK-2
TAB
7
1
H²PAK-6
Figure 1. Internal schematic diagram
Order codes
STH315N10F7-2
STH315N10F7-6
V_DS R_DS(on) max. I_D
100 V 2.3 mΩ 180 A
• Designed for automotive applications and
AEC-Q101 qualified
• Among the lowest R_DS(on) on the market
• Excellent figure of merit (FoM)
• Low C_rss/C_iss ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Description
These N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order codes
STH315N10F7-2
STH315N10F7-6
Table 1. Device summary
Marking
Package
315N10F7
H²PAK-2
H²PAK-6
September 2014
This is information on a product in full production.
DocID025090 Rev 4
Packaging
Tape and reel
1/19
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