STH290N4F6-2AG Datasheet, PDF (1/19 Pages) STMicroelectronics – High avalanche ruggedness

STH290N4F6-2AG,
STH290N4F6-6AG
Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6
Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
STH290N4F6-2AG
40 V
STH290N4F6-6AG
RDS(on)
max.
1.7 mΩ
ID
180 A
PTOT
300 W
• Designed for automotive applications and
AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
Order code
STH290N4F6-2AG
STH290N4F6-6AG
Table 1: Device summary
Marking
Package
290N4F6
H²PAK-2
H²PAK-6
Packing
Tape and Reel
July 2015
DocID027971 Rev 1
This is information on a product in full production.
1/19
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