STH275N8F7-2AG Datasheet, PDF (1/18 Pages) STMicroelectronics – AEC-Q101 qualified

STH275N8F7-2AG,
STH275N8F7-6AG
Automotive-grade N-channel 80 V, 1.7 mΩ typ., 180 A,
STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STH275N8F7-2AG
STH275N8F7-6AG
VDS RDS(on) max.
ID
80 V
2.1 mΩ
180 A
 AEC-Q101 qualified
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
These N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STH275N8F7-2AG
STH275N8F7-6AG
Table 1: Device summary
Marking
Package
275N8F7
H²PAK-2
H²PAK-6
Packing
Tape and reel
January 2017
DocID027223 Rev 4
This is information on a product in full production.
1/18
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