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STH270N8F7-2 Datasheet, PDF (1/21 Pages) STMicroelectronics – N-channel 80 V, 0.0017 typ., 180 A, STripFET VII DeepGATE Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220
STH270N8F7-2, STH270N8F7-6,
STP270N8F7
N-channel 80 V, 0.0017 Ω typ., 180 A, STripFET™ VII DeepGATE
Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220 packages
Datasheet − production data
TAB
TAB
Features
2
3
1
H2PAK-2
TAB
7
1
H2PAK-6
3
2
1
TO-220
Figure 1. Internal schematic diagram
$4!"
$ 4!"
'
'
Order codes
STH270N8F7-2
STH270N8F7-6
STP270N8F7
VDS RDS(on) max
ID
80 V
0.0021 Ω
0.0025 Ω
180 A
• Ultra low on-resistance
• 100% avalanche tested
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the 7th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
3     
(0!+  ( 0!+ 
3
4/ 
!-V
Order codes
STH270N8F7-2
STH270N8F7-6
STP270N8F7
Table 1. Device summary
Marking
Package
270N8F7
H2PAK-2
H2PAK-6
TO-220
Packaging
Tape and reel
Tube
October 2013
This is information on a product in full production.
DocID024006 Rev 3
1/21
www.st.com
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