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STH270N4F3-2 Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 40 V, 1.4 mΩ typ., 180 A STripFET III Power MOSFET
STH270N4F3-2, STH270N4F3-6
N-channel 40 V, 1.4 mΩ typ., 180 A STripFET™ III Power MOSFET
in H2PAK-2 and H2PAK-6 packages
Datasheet − production data
Features
TAB
2
3
1
H2PAK-2
TAB
7
1
H2PAK-6
Figure 1. Internal schematic diagram
Order codes
STH270N4F3-2
STH270N4F3-6
VDS
40 V
RDS(on) max ID
1.7 mΩ 180 A
• Conduction losses reduced
• Low profile, very low parasitic inductance, high
current package
Applications
• Automotive switching applications
Description
These devices are N-channel enhancement
mode Power MOSFETs produced using
STMicroelectronics’ STripFET™ III technology,
which is specifically designed to minimize on-
resistance and gate charge to provide superior
switching performance.
Order codes
STH270N4F3-2
STH270N4F3-6
Table 1. Device summary
Marking
Package
270N4F3
H2PAK-2
H2PAK-6
Packaging
Tape and reel
March 2013
This is information on a product in full production.
DocID16957 Rev 2
1/19
www.st.com
19