STH265N6F6-2AG Datasheet, PDF (1/18 Pages) STMicroelectronics – Very low gate charge

STH265N6F6-2AG,
STH265N6F6-6AG
Automotive N-channel 60 V, 1.6 mΩ typ., 180 A STripFET™ F6
Power MOSFET in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
TAB
TAB
2
3
1
H2PAK-2
7
1
H2PAK-6
Figure 1: Internal schematic diagram
D(TAB)
D(TAB)
G(1)
G(1)
Features
Order code
STH265N6F6-2AG
STH265N6F6-6AG
VDS
60 V
60 V
RDS(on) max
2.1 mΩ
2.1 mΩ
ID
180 A
180 A
 Designed for automotive applications
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
S(2, 3)
H²PAK-2
Order code
STH265N6F6-2AG
STH265N6F6-6AG
S(2, 3, 4, 5, 6, 7)
H²PAK-6
SC06140_HP2AK-2-6
Table 1: Device summary
Marking
Package
265N6F6
H²PAK-2
265N6F6
H²PAK-6
Packaging
Tape and reel
Tape and reel
December 2014
DocID027032 Rev 2
This is information on a product in full production.
1/18
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