STH260N6F6-6 Datasheet, PDF (1/13 Pages) STMicroelectronics – Very low on-resistance

STH260N6F6-6
N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™
Power MOSFET in H²PAK-6 package
Datasheet - preliminary data
TAB
7
1₁
H²PAK-6
Features
Order code
STH260N6F6-6
V_DS
60 V
R_DS(on) max
I_D
2.4 mΩ 180 A
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness
Applications
• Switching applications
Figure 1. Internal schematic diagram
Description
This device is an N-channel Power MOSFET
developed using the 6^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
Order code
STH260N6F6-6
Table 1. Device summary
Marking
Package
260N6F6
H²PAK-6
Packaging
Tape and reel
March 2014
DocID023411 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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