STH260N6F6-2 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package

STH260N6F6-2
N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™
Power MOSFET in H²PAK-2 package
Datasheet — production data
Features
Order code
STH260N6F6-2
V_DSS
60 V
R_DS(on) max
I_D
< 2.4 mΩ 180 A
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
TAB
2
3
1
H²PAK-2
Figure 1. Internal schematic diagram
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Table 1. Device summary
Order code
STH260N6F6-2
Marking
260N6F6
3
!-V
Package
H²PAK-2
Packaging
Tape and reel
July 2012
This is information on a product in full production.
Doc ID 018784 Rev 4
1/14
www.st.com
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